Infineon IRG7PH46UPBF

IRG7PH46UPBF Series 1200 V 130 A Insulated Gate Bipolar Transistor - TO-247AC
$ 8.4
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

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DistributorSKUMinPkg
Rochester ElectronicsIRG7PH46UPBF59
4h
RS (Formerly Allied Electronics)IRG7PH46UPBF050Bulk
17h
FarnellIRG7PH46UPBF01
3h
Microchip USAIRG7PH46UPBF14950Bulk
20h
Worldway ElectronicsIRG7PH46UPBF19.7557Tube
2h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRG7PH46UPBF.

IHS

Datasheet10 pagine13 anni fa

Newark

RS (Formerly Allied Electronics)

Cronologia dell'inventario

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Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-04-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-09-01
LTD Date2017-03-01

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Descrizioni

Descrizioni di Infineon IRG7PH46UPBF fornite dai suoi distributori.

IRG7PH46UPBF Series 1200 V 130 A Insulated Gate Bipolar Transistor - TO-247AC
Future Electronics
Trans IGBT Chip N-CH 1.2KV 130A 3-Pin(3+Tab) TO-247AC
Avnet
1200V Low VCEon Trench Discrete IGBT in a TO-247 package
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR Insulated Gate Bipolar Transistor, 117A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
ComSIT Distribution GmbH
TUBE / 1200V 108.000A TO-247 ;ROHS COMPLIANT: YES
Newark
IGBT TRENCH 1200V 130A TO-247AC
DigiKey Marketplace
IGBT,N CH,1200V,40A,TO-247AC; Transistor Type:IGBT; DC Collector Current:130A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:469W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:469W
element14 APAC

Immagini

Farnell
TME
RS (Formerly Allied Electronics)
Rochester Electronics
International Rectifier

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Alias del numero di parte

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  • IRFIRG7PH46UPBF