Infineon IRG4PSC71KPBF
$ 4.6
Obsolete
Prezzo e stock
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-06-30
LTD Date2018-12-31
Parti correlate
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Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
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InfineonIRGP4063DPBF
600V UltraFast Copack Trench IGBT in a TO-247AC package for apliance motion applications
Descrizioni
Descrizioni di Infineon IRG4PSC71KPBF fornite dai suoi distributori.
Trans IGBT Chip N-CH 600V 85A 350000mW 3-Pin(3+Tab) TO-274AA Tube
Bulk Through Hole N-CHANNEL Single IGBT Transistor 2.3V @ 15V 60A 200A 350W 54ns
600V UltraFast 8-25 kHz Discrete IGBT in a TO-274AA package
Insulated Gate Bipolar Transistor, 85A I(C), 600V V(BR)CES, N-Channel, TO-274AA
IRG4PSC71K Series 600 V 60 A Insulated Gate Bipolar Transistor - TO-247
Igbt Discretes Rohs Compliant: Yes
Target Applications: Refridgeration
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V,Vce(on)typ.=1.83V, @Vge=15V, Ic=60A) | IGBT 600V 85A 350W SUPER247
IGBT, 600V, 85A, TO-274AA; DC Collector Current:85A; Collector Emitter Voltage Vces:2.3V; Power Dissipation Pd:350W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:Super-247; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Ic Continuous a Max:85A; Current Temperature:25°C; Fall Time Max:133ns; Fall Time tf:133ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:Super-247; Power Dissipation Max:350W; Power Dissipation Pd:350W; Pulsed Current Icm:200A; Rise Time:54ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.2 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current85 A
Current Rating85 A
Element ConfigurationSingle
Fall Time133 ns
Max Collector Current85 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Power Dissipation350 W
Rise Time54 ns
Turn-Off Delay Time251 ns
Turn-On Delay Time34 ns
Voltage Rating (DC)600 V
Dimensions
Height25.05 mm
Length16.0782 mm
Width5.5 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità