Infineon IRG4PC50FDPBF
Obsolete
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Distributori autorizzati
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Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRG4PC50FDPBF.
Modelli CAD
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| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 EE Concierge | SimboloImpronta | ||
 SnapEDA | Impronta | Scarica |
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-04-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-06-30
LTD Date2020-12-31
Parti correlate
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Trans IGBT Chip N-CH 600V 70A 250000mW 3-Pin(3+Tab) TO-247 Tube
STMicroelectronicsSTGW40NC60W
STGW40NC60W Series 600 V 40 A Flange Mount Ultra Fast IGBT - TO-247
Descrizioni
Descrizioni di Infineon IRG4PC50FDPBF fornite dai suoi distributori.
IRG4PC50FDPbF Series 600 V 39 A N-Channel Fast CoPack IGBT - TO-247AC
FAST COPACK INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AC
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.6 V Current release time: 260 ns Power dissipation: 200 W
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Current Temperature:25°C; Fall Time Max:140ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:280A; Rise Time:25ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.6 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current70 A
Current Rating70 A
Element ConfigurationSingle
Fall Time210 ns
Max Collector Current70 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 W
Min Operating Temperature-55 °C
Number of Elements1
Package Quantity400
PackagingBulk
Power Dissipation200 W
Reverse Recovery Time50 ns
Rise Time25 ns
Schedule B8541290080
TerminationThrough Hole
Turn-Off Delay Time240 ns
Turn-On Delay Time55 ns
Voltage Rating (DC)600 V
Dimensions
Height24.6 mm
Length15.87 mm
Width5.3086 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRG4PC50FDPBF.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità