Infineon IRFU6215PBF
$ 1.68
Obsolete
Prezzo e stock
Distributori autorizzati
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Rivenditori non autorizzati
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-06-25
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-10-31
LTD Date2021-04-30
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42W(Tc) 20V 4V@ 250¦ÌA 14nC@ 10 V 1P 50V 280m¦¸@ 5.7A,10V 9.9A 490pF@25V TO-251AA 6.73mm*2.39mm*6.22mm
Descrizioni
Descrizioni di Infineon IRFU6215PBF fornite dai suoi distributori.
IRFU6215PBF P-channel MOSFET Transistor, 13 A, 150 V, 3-Pin IPAK
Single P-Channel 150 V 580 mOhm 66 nC HEXFET® Power Mosfet - IPAK
Power MOSFET(Vdss=-150V, Rds(on)=0.295ohm, Id=-13A) | MOSFET P-CH 150V 13A I-PAK
-150V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 13A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-150V; Continuous Drain Current, Id:-13A; On Resistance, Rds(on):295mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:I-PAK ;RoHS Compliant: Yes
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)13 A
Current Rating-13 A
Drain to Source Breakdown Voltage-150 V
Drain to Source Resistance295 mΩ
Drain to Source Voltage (Vdss)-150 V
Dual Supply Voltage-150 V
Element ConfigurationSingle
Fall Time37 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance860 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
On-State Resistance580 mΩ
Package Quantity3000
PackagingBulk
Power Dissipation110 W
Rds On Max295 mΩ
Resistance580 MΩ
Rise Time36 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time53 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)-150 V
Dimensions
Height9.75 mm
Length6.7056 mm
Width2.3876 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità