Infineon IRFU5505PBF
$ 0.494
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: -28.57%
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Schede tecniche e documenti
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-06-04
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2014-01-09
LTD Date2014-07-09
Parti correlate
onsemiHUF75321D3
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs | MOSFET N-CH 55V 20A IPAK
InfineonIRLU024NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.065Ohm;ID 17A;I-Pak (TO-251AA);PD 45W
InfineonIRFU024NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 17A;I-Pak (TO-251AA);PD 45W
Descrizioni
Descrizioni di Infineon IRFU5505PBF fornite dai suoi distributori.
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.11Ohm;ID -18A;I-Pak (TO-251AA);PD 57W
Single P-Channel 55 V 0.11 Ohm 32 nC HEXFET® Power Mosfet - TO-251AA
-55V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
MOSFET, P, -55V, -18A, I-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:55V; On Resistance Rds(on):110mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:57W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:-18A; Junction to Case Thermal Resistance A:2.2°C/W; On State resistance @ Vgs = 10V:110ohm; Package / Case:IPAK; Power Dissipation Pd:57W; Power Dissipation Pd:57W; Pulse Current Idm:64A; Termination Type:Through Hole; Turn Off Time:16ns; Turn On Time:28ns; Voltage Vds Typ:-55V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -28.57%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)18 A
Current Rating-18 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)-55 V
Dual Supply Voltage-55 V
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance650 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation57 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Elements1
On-State Resistance110 mΩ
Package Quantity3000
PackagingBulk
Power Dissipation57 W
Rds On Max110 mΩ
Resistance110 Ω
Rise Time28 ns
Threshold Voltage-4 V
Turn-Off Delay Time20 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)-55 V
Dimensions
Height6.22 mm
Length6.7056 mm
Width2.3876 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRFU5505PBF.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità