Infineon IRFU4105ZPBF
$ 1.5
Obsolete
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Min
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Cronologia dell'inventario
Nessun dato disponibile
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Modelli CAD
Scarica il simbolo Infineon IRFU4105ZPBF, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 EE Concierge | SimboloImpronta |
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-08-25
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2019-11-15
LTD Date2020-05-15
Parti correlate
InfineonIRFU5305PBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.065Ohm;ID -31A;I-Pak (TO-251AA);PD 110W
onsemiNTD32N06-1G
Tube Through Hole N-Channel Single Mosfet Transistor 32A Ta 32A 93.75W 93ns
Descrizioni
Descrizioni di Infineon IRFU4105ZPBF fornite dai suoi distributori.
MOSFET N-CH 55V 30A IPAK N-Channel 55 V 30A (Tc) 48W (Tc) Through Hole IPAK (TO-251AA)
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
Single N-Channel 55 V 24.5 mOhm 18 nC HEXFET® Power Mosfet - IPAK
Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A) | MOSFET N-CH 55V 30A I-PAK
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 30A I(D), 55V, 0.0245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
MOSFET, N, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:30A; Resistance, Rds On:0.00245ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:I-PAK; Termination ;RoHS Compliant: Yes
MOSFET, N, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):24.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:48W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-251; Current Id Max:30A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Length:9.65mm; Lead Spacing:2.28mm; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:120A; SMD Marking:IRFU4105ZPBF; Termination Type:Through Hole; Turn Off Time:26ns; Turn On Time:10ns; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Nessun dato disponibile
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-251
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)30 A
Current Rating30 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance24.5 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time24 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance740 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation15 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance24.5 mΩ
Package Quantity3000
PackagingBulk
Power Dissipation48 W
Rds On Max24.5 mΩ
Recovery Time29 ns
Rise Time40 ns
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time26 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)55 V
Dimensions
Height9.75 mm
Lead Length9.65 mm
Lead Pitch2.28 mm
Length6.6 mm
Width2.3 mm
Conformità
Classificazione ambientale
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità