Infineon IRFU1018EPBF
$ 0.792
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-03-07
Lifecycle StatusObsolete (Last Updated: 9 months ago)
LTB Date2017-10-12
LTD Date2018-04-12
Parti correlate
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MOSFET N-CH 55V 42A IPAK N-Channel 55 V 42A (Tc) 140W (Tc) Through Hole IPAK (TO-251AA)
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MOSFET N-CH 75V 56A IPAK N-Channel 75 V 56A (Tc) 140W (Tc) Through Hole IPAK (TO-251AA)
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MOSFET N-CH 60V 43A IPAK N-Channel 60 V 43A (Tc) 71W (Tc) Through Hole IPAK (TO-251AA)
InfineonIRFU2405PBF
Power Field-Effect Transistor, 56A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Descrizioni
Descrizioni di Infineon IRFU1018EPBF fornite dai suoi distributori.
MOSFET N-CH 60V 56A IPAK N-Channel 60 V 56A (Tc) 110W (Tc) Through Hole IPAK (TO-251AA)
MOSFET, N Ch., 60V, 77A, 8.4 MOHM, 51 NC QG, I-PAK, Pb-Free
60V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
MOSFET, N, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; SVHC:No SVHC (20-Jun-2011); Current Id Max:56A; Package / Case:IPAK; Power Dissipation Pd:110W; Pulse Current Idm:315A; Termination Type:Through Hole; Turn Off Time:55ns; Turn On Time:13ns; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
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Specifiche tecniche
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)56 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance8.4 mΩ
Drain to Source Voltage (Vds)60 V
Element ConfigurationSingle
Fall Time46 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.29 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance8.4 mΩ
Package Quantity3000
Power Dissipation110 W
Rds On Max8.4 mΩ
Recovery Time39 ns
Resistance8.4 MΩ
Rise Time35 ns
Threshold Voltage4 V
Turn-Off Delay Time55 ns
Turn-On Delay Time13 ns
Dimensions
Height6.22 mm
Length6.7056 mm
Width2.3876 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Dichiarazioni di conformità