Infineon IRFR1205TRPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.027 Ohm; Id 44A; D-pak (TO-252AA); Pd 107W
$ 0.474
Production
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
NewarkIRFR1205TRPBF37181
Future Electronics
2
IRFR1205TRPBF106.0002KTape & Reel
Arrow Electronics
4
IRFR1205TRPBF20001
DigiKey
3
IRFR1205PBFCT-ND34.2361Cut Tape
RS (Formerly Allied Electronics)IRFR1205TRPBF020Bulk
10h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRFR1205TRPBF.

IHS

Datasheet12 pagine21 anni fa

Newark

RS (Formerly Allied Electronics)

iiiC

DigiKey

Cronologia dell'inventario

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Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-01-01
Lifecycle StatusProduction (Last Updated: 5 months ago)

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Descrizioni

Descrizioni di Infineon IRFR1205TRPBF fornite dai suoi distributori.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.027Ohm;ID 44A;D-Pak (TO-252AA);PD 107W
RS (Formerly Allied Electronics)
Single N-Channel 55 V 0.027 Ohm 65nC HEXFET® Power Mosfet - TO-252AA
Future Electronics
Trans MOSFET N-CH 55V 44A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 55V 44A DPAK
Win Source
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
ComSIT Distribution GmbH
Transistor Polarity:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:44A; On Resistance Rds(On):0.027Ohm; Transistor Mounting:Surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: Yes |Infineon IRFR1205TRPBF.
Newark
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Infineon
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 44 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 27 / Gate-Source Voltage V = 20 / Fall Time ns = 60 / Rise Time ns = 69 / Turn-OFF Delay Time ns = 47 / Turn-ON Delay Time ns = 7.3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 107
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Immagini

Infineon
Farnell
element14
element14 APAC
RS (Formerly Allied Electronics)
TME
iiiC
Future Electronics
LZChips
LCSC
Rochester Electronics
South Microelectronics

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFR1205TRPBF.
  • SP001560566