Infineon IRFR024NPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.075 Ohm; Id 17A; D-pak (TO-252AA); Pd 45W
$ 1.5
Obsolete
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Schede tecniche e documenti

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Newark

Datasheet11 pagine21 anni fa
Datasheet11 pagine27 anni fa
Datasheet10 pagine27 anni fa

IHS

Upverter

RS (Formerly Allied Electronics)

Jameco

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-02-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15

Parti correlate

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 17A;D-Pak (TO-252AA);PD 45W
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 17A;D-Pak (TO-252AA);PD 45W
19 A 55 V 0.07 ohm N-CHANNEL Si POWER MOSFET TO-252AA
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.065Ohm;ID 17A;D-Pak (TO-252AA);PD 45W
PWR MOS ULTRAFET 55V/15A/0.090OHMS N-CHANNEL TO-252AA
15 A 55 V 0.09 ohm N-CHANNEL Si POWER MOSFET TO-252AA

Descrizioni

Descrizioni di Infineon IRFR024NPBF fornite dai suoi distributori.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 17A;D-Pak (TO-252AA);PD 45W
Single N-Channel 55 V 0.075 Ohm 20 nC HEXFET® Power Mosfet - TO-252AA
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):75mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D-PAK ;RoHS Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 17 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 75 / Gate-Source Voltage V = 20 / Fall Time ns = 27 / Rise Time ns = 34 / Turn-OFF Delay Time ns = 19 / Turn-ON Delay Time ns = 4.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 45
MOSFET, N, 55V, 16A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:55V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:38W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:17A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.3°C/W; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:38W; Power Dissipation Pd:38W; Pulse Current Idm:68A; SMD Marking:IRFR024N; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFR 024 N PBF
  • IRFR 024NPBF
  • IRFR-024NPBF
  • IRFR024N PBF
  • IRFR024NPBF.
  • SP001578012