Infineon IRFP4768PBF
$ 2.451
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Cronologia dell'inventario
Tendenza a 3 mesi: -0.98%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-02-26
Lifecycle StatusProduction (Last Updated: 3 months ago)
LTB Date2026-05-31
LTD Date2026-11-30
Parti correlate
InfineonIRFP90N20DPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.023Ohm;ID 94A;TO-247AC;PD 580W;VGS +/-30V
InfineonIRFP4868PBF
Trans MOSFET N-CH 300V 70A 3-Pin(3+Tab) TO-247AC Tube / MOSFET N-CH 300V 70A TO-247AC
Descrizioni
Descrizioni di Infineon IRFP4768PBF fornite dai suoi distributori.
Single N-Channel 250 V 17.5 mOhm 270 nC HEXFET® Power Mosfet - TO-247AC
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 93A I(D), 250V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N-CH 250V 93A TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:250V; On Resistance Rds(on):17.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:520W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:93A; Package / Case:TO-247AC; Power Dissipation Pd:520W; Power Dissipation Pd:520W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:250V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -0.98%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTO-247-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)93 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance17.5 mΩ
Drain to Source Voltage (Vdss)250 V
Dual Supply Voltage250 V
Element ConfigurationSingle
Fall Time110 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance10.88 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation520 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
On-State Resistance17.5 mΩ
Package Quantity400
Power Dissipation520 W
Rds On Max17.5 mΩ
Resistance17.5 MΩ
Rise Time160 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage5 V
Turn-Off Delay Time57 ns
Turn-On Delay Time36 ns
Dimensions
Height24.99 mm
Length15.87 mm
Width5.3086 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità