Infineon IRFI4410ZPBF

100V Single N-Channel HEXFET Power MOSFET in a TO-220AB FullPak package, FULLPAK220-3, RoHS
$ 1.089
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

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DistributorSKUMinPkg
Arrow ElectronicsIRFI4410ZPBF4701
Rochester ElectronicsIRFI4410ZPBF8363
1h
RS (Formerly Allied Electronics)IRFI4410ZPBF05Bulk
17h
FarnellIRFI4410ZPBF9211
1d
VericalIRFI4410ZPBF4702

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRFI4410ZPBF.

Farnell

Datasheet9 pagine9 anni fa

IHS

TME

Cronologia dell'inventario

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Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-03-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descrizioni

Descrizioni di Infineon IRFI4410ZPBF fornite dai suoi distributori.

100V Single N-Channel HEXFET Power MOSFET in a TO-220AB FullPak package, FULLPAK220-3, RoHS
Infineon SCT
Single N Channel 100 V 9.3 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3
Future Electronics
Power MOSFET, N Channel, 100 V, 43 A, 9.3 Milliohms, TO-220AB, 3 Pins, Through Hole
Avnet
TUBE / MOSFET, 100V, 65A, 9.3mOhm, 83 nC Qg, TO-220 fullpak
Newark
Trans MOSFET N-CH 100V 43A 3-Pin(3+Tab) TO-220AB Full-Pak
Verical
Power Field-Effect Transistor, 43A I(D), 100V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IHS
MOSFET, N-CH, 100V, 43A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 43A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0079; Available until stocks are exhausted Alternative available
Farnell
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Infineon
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 43 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 7.9 / Gate-Source Voltage V = 30 / Fall Time ns = 30 / Rise Time ns = 27 / Turn-OFF Delay Time ns = 43 / Turn-ON Delay Time ns = 15 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 47
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Immagini

Infineon
Farnell
Farnell
TME
RS (Formerly Allied Electronics)
LZChips

Alias del produttore

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  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFI4410Z
  • SP001566742