Infineon IRFI4410ZPBF
$ 1.614
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: -20.32%
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Schede tecniche e documenti
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-03-23
Lifecycle StatusObsolete (Last Updated: 8 months ago)
Parti correlate
NXP SemiconductorsPSMN8R5-100XSQ
MOSFET N-CH 100V 49A TO-220F / Trans MOSFET N-CH 100V 49A 3-Pin(3+Tab) TO-220F Rail
STMicroelectronicsSTF100N10F7
N-channel 100 V, 0.0068 Ohm typ., 80 A STripFET F7 Power MOSFET in TO-220FP package
STMicroelectronicsSTF110N10F7
N-channel 100 V, 5.1 mOhm typ., 45 A STripFET F7 Power MOSFET in TO-220FP package
InfineonIPA083N10N5XKSA1
OptiMOS Series N-Channel 100 V 44 A (Tc) 36 W (Tc) MOSFET - PG-TO220-FP
STMicroelectronicsSTF80N10F7
N-channel 100 V, 0.0085 Ohm typ., 40 A STripFET F7 Power MOSFET in TO-220FP package
Descrizioni
Descrizioni di Infineon IRFI4410ZPBF fornite dai suoi distributori.
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB FullPak package, FULLPAK220-3, RoHS
Infineon SCT
Single N Channel 100 V 9.3 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3
Power MOSFET, N Channel, 100 V, 43 A, 9.3 Milliohms, TO-220AB, 3 Pins, Through Hole
TUBE / MOSFET, 100V, 65A, 9.3mOhm, 83 nC Qg, TO-220 fullpak
Trans MOSFET N-CH 100V 43A 3-Pin(3+Tab) TO-220AB Full-Pak
Power Field-Effect Transistor, 43A I(D), 100V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 100V, 43A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 43A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0079; Available until stocks are exhausted Alternative available
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 43 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 7.9 / Gate-Source Voltage V = 30 / Fall Time ns = 30 / Rise Time ns = 27 / Turn-OFF Delay Time ns = 43 / Turn-ON Delay Time ns = 15 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 47
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -20.32%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)43 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance9.3 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance4.91 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation47 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance9.3 mΩ
Package Quantity2000
Power Dissipation47 W
Rds On Max9.3 mΩ
Rise Time27 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time43 ns
Turn-On Delay Time15 ns
Dimensions
Height19.8 mm
Length10.7442 mm
Width4.826 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRFI4410ZPBF.
Conformità
Classificazione ambientale
Lead FreeLead Free
REACH SVHCUnaffected
RoHSCompliant
Dichiarazioni di conformità