Infineon IRFHS8342TR2PBF
Obsolete
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-11-18
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2014-05-12
LTD Date2014-11-12
Parti correlate
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Descrizioni
Descrizioni di Infineon IRFHS8342TR2PBF fornite dai suoi distributori.
30V Single N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package
Trans MOSFET N-CH 30V 8.8A 6-Pin PQFN EP T/R
MOSFET N-Channel 30V 8.8A HEXFET PQFN6EP
HEXFET POWER MOSFET Power Field-Effect Transistor, 8.8A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET,N CH,30V,8.5A,PQFN22; Transistor Polarity:N Channel; Continuous Drain Current Id:8.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:8.8A; Power Dissipation Pd:2.1W; Voltage Vgs Max:20V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageQFN
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)8.8 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance16 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance600 pF
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Elements1
Power Dissipation2.1 W
Rds On Max16 mΩ
Recovery Time17 ns
Rise Time15 ns
Threshold Voltage1.8 V
Turn-Off Delay Time5.2 ns
Turn-On Delay Time5.9 ns
Dimensions
Height950 µm
Length2.1 mm
Width2.1 mm
Conformità
Classificazione ambientale
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità