Infineon IRFH8325TR2PBF
$ 0.77
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFH8325TR2PBF | 0 | 125 | Bulk | 18h | |||||||
| Microchip USA | IRFH8325TR2PBF | 116 | 300 | 17m | ||||||||
| Win Source | WS-IRFH8325TR2PBF | 16.000 | 100 | 7h | ||||||||
| Worldway Electronics | IRFH8325TR2PBF | 12.158 | 7 | Tape & Reel | 6h | |||||||
| ICPartonline | IRFH8325TR2PBF | 33.124 | >1wk |
Modelli CAD
Scarica il simbolo Infineon IRFH8325TR2PBF, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 EE Concierge | SimboloImpronta |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-04-22
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2014-05-12
LTD Date2014-11-12
Parti correlate
InfineonIRFH8324TR2PBF
N CH POWER MOSFET, HEXFET, 30V, 23A, PQFN-8; Transistor Polarity:N Channel; Cont
InfineonIRFH8324TRPBF
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
InfineonIRFHM9331TR2PBF
-30V Single P-Channel HEXFET Power MOSFET in a PQFN 3mm x 3mm package
Descrizioni
Descrizioni di Infineon IRFH8325TR2PBF fornite dai suoi distributori.
N CH POWER MOSFET, HEXFET, 30V, 21A, PQFN-8; Transistor Polarity:N Channel; Cont
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
Trans MOSFET N-CH 30V 21A 8-Pin QFN EP T/R
MOSFET N-Channel 30V 21A HEXFET PQFN8EP
HEXFET POWER MOSFET Power Field-Effect Transistor, 21A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET,N CH,W DIODE,30V,25A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0041ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:54W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2011)
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageQFN
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)21 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time7.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.487 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation54 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels1
Number of Elements1
Power Dissipation3.6 W
Rds On Max5 mΩ
Recovery Time24 ns
Resistance5 MΩ
Rise Time16 ns
Threshold Voltage1.8 V
Turn-Off Delay Time14 ns
Turn-On Delay Time12 ns
Dimensions
Height1.17 mm
Length5.85 mm
Width5 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità