Infineon IRFH5104TR2PBF
$ 1.445
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-01-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-05-12
Parti correlate
InfineonIRFH5004TRPBF
40V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
InfineonIRFH5302DTRPBF
Single N-Channel 30 V 2.5 mOhm 26 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
InfineonIRFH7004TRPBF
40V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
Descrizioni
Descrizioni di Infineon IRFH5104TR2PBF fornite dai suoi distributori.
40V Single N-Channel HEXFET Power MOSFET in a PQFN package
Trans MOSFET N-CH 40V 24A 8-Pin PQFN T/R
MOSFET N-Channel 40V 24A HEXFET PQFN8
3.6W(Ta),114W(Tc) 20V 4V@ 100¦ÌA 80nC@ 10 V 1N 40V 3.5m¦¸@ 50A,10V 24A,100A 3.12nF@25V QFN 5mm*6mm*810¦Ìm
Power Field-Effect Transistor, 24A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET [IR] IRFH5104TR2PBF MOSFET
MOSFET,N CH,40V,24A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0029ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Power Dissipation Pd:3.6W; Voltage Vgs Max:20V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageVQFN
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)24 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance3.5 mΩ
Drain to Source Voltage (Vdss)40 V
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.12 nF
Max Operating Temperature150 °C
Max Power Dissipation114 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
Rds On Max3.5 mΩ
Recovery Time47 ns
Resistance3.5 MΩ
Rise Time15 ns
Threshold Voltage4 V
Turn-Off Delay Time20 ns
Turn-On Delay Time9.5 ns
Dimensions
Height900 µm
Length6 mm
Width5 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità