Infineon IRFH4210DTRPBF
$ 2.48
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRFH4210DTRPBF | 4000 | 3h | |||||||||
| Newark | IRFH4210DTRPBF | 0 | 1 | Cut Tape | ||||||||
| RS (Formerly Allied Electronics) | IRFH4210DTRPBF | 0 | 4K | Bulk | 20h | |||||||
| Avnet | IRFH4210DTRPBF | 0 | 4K | 5h | ||||||||
| Farnell | IRFH4210DTRPBF | 0 | 1 | Cut Tape | 2h |
Cronologia dell'inventario
Tendenza a 3 mesi: -4.27%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2013-05-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Parti correlate
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InfineonBSC050NE2LSATMA1
Power MOSFET, N Channel, 25 V, 58 A, 0.0042 ohm, TDSON, Surface Mount
Descrizioni
Descrizioni di Infineon IRFH4210DTRPBF fornite dai suoi distributori.
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
Infineon SCT
Trans MOSFET N-CH 25V 44A 8-Pin PQFN EP T/R / MOSFET N-CH 25V 44A 8PQFN
FETKEY, 25V,100A, 1.1m, 36nC, PQFN5x6 single
3.5W(Ta),125W(Tc) 20V 2.1V@ 100¦ÌA 77nC@ 10 V 1N 25V 1.1m¦¸@ 50A,10V 44A 4.812nF@13V QFN 6mm*5mm*830¦Ìm
IRFH4210 - 12V-300V N-CHANNEL PO
Benefits: Low RDS(ON) (less than 1.10 mOhms); Schottky Intrinsic Diode with Low Forward Voltage; Low Thermal Resistance to PCB (less than 1.0C/W); Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; RoHS Compliant, Halogen-Free; MSL1, Industrial Qualification; FastIRFET | Target Applications: MultiPhase SyncFET; Point of Load SyncFET
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -4.27%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
MountSurface Mount
Technical
Continuous Drain Current (ID)100 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance1.1 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.812 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance1.1 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation3.5 W
Rds On Max1.1 mΩ
Resistance1.1 MΩ
Rise Time45 ns
Threshold Voltage1.6 V
Turn-Off Delay Time24 ns
Turn-On Delay Time19 ns
Dimensions
Height950 µm
Length6 mm
Width5 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità