Infineon IRFB7540PBF
$ 0.608
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Cronologia dell'inventario
Tendenza a 3 mesi: -0.87%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-01-16
Lifecycle StatusEOL (Last Updated: 4 months ago)
LTB Date2026-09-30
LTD Date2027-03-31
Parti correlate
InfineonIPP80N06S407AKSA2
60V, N-Ch, 7.1 mΩ max, Automotive MOSFET, TO-220, OptiMOS™-T2, PG-TO220-3, RoHS
InfineonIPP120N06S402AKSA2
Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101
NXP SemiconductorsBUK753R5-60E,127
Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Descrizioni
Descrizioni di Infineon IRFB7540PBF fornite dai suoi distributori.
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
Infineon SCT
Single N-Channel 60 V 5.1 mOhm 88 nC HEXFET® Power Mosfet - TO-220-3
Infineon N-Channel MOSFET, StrongIRFET Series, Vds=60V, 110A, TO-220AB, TH, 3-Pin
Trans MOSFET N-CH 60V 110A 3-Pin(3+Tab) TO-220AB Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 160 W
HEXFET POWER MOSFET Power Field-Effect Transistor, 110A I(D), 60V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:110A; On Resistance Rds(On):0.0042Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; Msl:- Rohs Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -0.87%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)110 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance5.1 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time56 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.555 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation160 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance5.1 mΩ
Package Quantity1000
Power Dissipation160 W
Rds On Max5.1 mΩ
Rise Time76 ns
Schedule B8541290080
Threshold Voltage3.7 V
Turn-Off Delay Time58 ns
Turn-On Delay Time12 ns
Dimensions
Height19.8 mm
Length10.67 mm
Width4.83 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
REACH SVHCUnaffected
RoHSCompliant
Dichiarazioni di conformità