Infineon IRFB5615PBF
$ 0.617
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Cronologia dell'inventario
Tendenza a 3 mesi: -21.31%
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Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2021-04-28
Lifecycle StatusProduction (Last Updated: 3 months ago)
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Descrizioni
Descrizioni di Infineon IRFB5615PBF fornite dai suoi distributori.
150V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Single N-Channel 150 V 39 mOhm 26 nC HEXFET® Power Mosfet - TO-220-3
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 144 W
Trans MOSFET N-CH 150V 150A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 35A I(D), 150V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET DIG AUDIO CLASS D 150V TO220AB; Transistor Polarity:N Channel; On State Resistance:39mohm; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; Case Style:TO-220AB; Cont Current Id:21A; Max Voltage Vgs th:20V; Power Dissipation Pd:144W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Typ Voltage Vds:150V; Typ Voltage Vgs th:5V; Voltage Vgs Rds on Measurement:10V
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -21.31%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)35 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance39 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time13.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.75 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation144 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
On-State Resistance39 mΩ
Package Quantity1000
Power Dissipation144 W
Rds On Max39 mΩ
Recovery Time120 ns
Resistance39 MΩ
Rise Time23.1 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time17.2 ns
Turn-On Delay Time8.9 ns
Dimensions
Height19.8 mm
Length10.668 mm
Width4.826 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità