Infineon IRFB4310PBF
$ 1.29
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Cronologia dell'inventario
Tendenza a 3 mesi: +49.03%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-06-29
Lifecycle StatusProduction (Last Updated: 1 month ago)
LTB Date2014-01-09
LTD Date2014-07-09
Parti correlate
InfineonIRFB4310ZPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 4.8 Milliohms;ID 120A;TO-220AB;PD 250W
InfineonIRF3808PBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 5.9Milliohms;ID 140A;TO-220AB;PD 330W;-55de
InfineonIRF2907ZPBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 3.5Milliohms;ID 170A;TO-220AB;PD 300W;-55de
Descrizioni
Descrizioni di Infineon IRFB4310PBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 5.6 Milliohms;ID 130A;TO-220AB;PD 300W
Single N-Channel 100 V 7 mOhm 250 nC HEXFET® Power Mosfet - TO-220-3
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 100 V, 130 A, 0.007 ohm, TO-220AB, Through Hole
Trans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-220AB
Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 100V, 130A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:130A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRFB4310PBF.
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +49.03%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Current Rating140 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance7 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time78 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.67 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation300 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance7 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation300 W
Rds On Max7 mΩ
Recovery Time68 ns
Resistance7 MΩ
Rise Time110 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time68 ns
Turn-On Delay Time26 ns
Voltage Rating (DC)100 V
Dimensions
Height20.56 mm
Length10.6426 mm
Width4.82 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità