Infineon IRF7410PBF

INFINEON IRF7410PBF MOSFET Transistor, P Channel, 16 A, -12 V, 7 mohm, -4.5 V, -900 mV

MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 7 Milliohms;ID -16A;SO-8;PD 2.5W;VGS +/-8V

Transistor MOSFET Positive Channel 20 Volt 16A 8-Pin SOIC

Single P-Channel 12 V 7 mOhm 91 nC HEXFET® Power Mosfet - SOIC-8

-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Power Field-Effect Transistor, 16A I(D), 12V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

MOSFET, P, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:12V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-16A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Pin Configuration:b; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:65A; Row Pitch:6.3mm; SMD Marking:F7410; Termination Type:SMD; Voltage Vds Typ:-12V; Voltage Vgs Max:-900mV; Voltage Vgs Rds on Measurement:-4.5V