Infineon IRF7403PBF

Mosfet, Power; N-ch; Vdss 30V; Rds(on) 0.022 Ohm; Id 8.5A; SO-8; Pd 2.5W; Vgs +/-20V; Vf
Obsolete
Pagina del produttoreScheda dati

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Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRF7403PBF.

IHS

Datasheet10 pagine21 anni fa
Datasheet9 pagine21 anni fa

TME

RS (Formerly Allied Electronics)

Jameco

iiiC

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-02-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16

Parti correlate

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MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.022Ohm;ID 8.5A;SO-8;PD 2.5W;VGS +/-20V;VF
Si4830CDY Series Dual N-Channel 30 V 20 mOhm 2.9 W Surface Mount Mosfet - SOIC-8
N-Channel 30 V 0.024 Ohm 5 W Surface Mount Power Mosfet - SOIC-8
Single N-Channel 30 V 0.0135 Ohm 30 nC HEXFET® Power Mosfet - SOIC-8
STMicroelectronicsSTS11NF30L
N-Channel 30V - 0.009 Ohm - 11A - SO-8 LOW GATE CHARGE StripFET(TM) II POWER MOSFET
InfineonIRF7201TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.03Ohm;ID 7.3A;SO-8;PD 2.5W;VGS +/-20V;-55d

Descrizioni

Descrizioni di Infineon IRF7403PBF fornite dai suoi distributori.

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.022Ohm;ID 8.5A;SO-8;PD 2.5W;VGS +/-20V;VF
Trans MOSFET N-CH 30V 8.5A 8-Pin SOIC Tube
HEXFET POWER MOSFET Power Field-Effect Transistor, 8.5A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:8.5A; On Resistance, Rds(on):22mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.6W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8.5A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:SOIC; Pin Configuration:b; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation Pd:1.6W; Power Dissipation Pd:1.6W; Pulse Current Idm:27A; Row Pitch:6.3mm; SMD Marking:F7403; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRF7403 PBF
  • SP001563614