Infineon IRF7241PBF
$ 0.76
Obsolete
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2001-01-31
Lifecycle StatusObsolete (Last Updated: 2 months ago)
Parti correlate
InfineonIRF7241TRPBF
MOSFET, Power;P-Ch;VDSS -40V;RDS(ON) 25Milliohms;ID -6.2A;SO-8;PD 2.5W;VGS +/-2
InfineonIRF7201PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.03Ohm;ID 7.3A;SO-8;PD 2.5W;VGS +/-20V;-55d
Descrizioni
Descrizioni di Infineon IRF7241PBF fornite dai suoi distributori.
MOSFET, Power;P-Ch;VDSS -40V;RDS(ON) 25Milliohms;ID -6.2A;SO-8;PD 2.5W;VGS +/-2
Single P-Channel 40 V 41 mOhm 80 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET P-CH 40V 6.2A 8-Pin SOIC Tube
-40V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Small Signal Field-Effect Transistor, 6.2A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, P, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:6.2A; Drain Source Voltage Vds:40V; On Resistance Rds(on):41mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-6.2A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:25A; SMD Marking:F7241; Termination Type:SMD; Voltage Vds:40V; Voltage Vds Typ:-40V; Voltage Vgs Max:-3V; Voltage Vgs Rds on Measurement:-10V
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)6.2 A
Current Rating-6.2 A
Drain to Source Breakdown Voltage-40 V
Drain to Source Resistance41 mΩ
Drain to Source Voltage (Vdss)-40 V
Dual Supply Voltage-40 V
Element ConfigurationSingle
Fall Time100 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.22 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs-3 V
Number of Elements1
On-State Resistance41 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2.5 W
Rds On Max41 mΩ
Recovery Time48 ns
Resistance41 MΩ
Rise Time280 ns
Threshold Voltage-3 V
Turn-Off Delay Time210 ns
Turn-On Delay Time24 ns
Voltage Rating (DC)-40 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità