Infineon IRF7205PBF
$ 0.59
Obsolete
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Schede tecniche e documenti
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-02-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Parti correlate
InfineonIRF7316TRPBF
MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.042Ohm;ID -4.9A;SO-8;PD 2W;VGS +/-20
Descrizioni
Descrizioni di Infineon IRF7205PBF fornite dai suoi distributori.
Transistor MOSFET P Channel 30 Volt 4.6 Amp 8 Pin SOIC
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.07Ohm;ID -4.6A;SO-8;PD 2.5W;VGS +/-20V
Single P-Channel 30 V 0.13 Ohm 40 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET P-CH 30V 4.6A 8-Pin SOIC Tube
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, P, LOGIC, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:4.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-4.6A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:15A; SMD Marking:F7205; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:-30V; Voltage Vgs Max:-3V; Voltage Vgs Rds on Measurement:-10V
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)4.6 A
Current Rating-5.3 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage-30 V
Element ConfigurationSingle
Fall Time71 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance870 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-3 V
Number of Elements1
On-State Resistance70 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2.5 W
Rds On Max70 mΩ
Recovery Time100 ns
Resistance70 mΩ
Rise Time21 ns
Threshold Voltage-3 V
Turn-Off Delay Time97 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF7205PBF.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità