Infineon IRF7204PBF
$ 0.211
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1995-07-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Parti correlate
Descrizioni
Descrizioni di Infineon IRF7204PBF fornite dai suoi distributori.
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.06Ohm;ID -5.3A;SO-8;PD 2.5W;VGS +/-12V
Transistor MOSFET P Channel 20 Volt 5.3 Amp 8 Pin SOIC
Single P-Channel 20 V 0.06 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET P-CH 20V 5.3A 8-Pin SOIC Tube
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET, P, LOGIC, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:5.3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-2.5V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-5.3A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:21A; SMD Marking:F7204; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:-20V; Voltage Vgs Max:-2.5V; Voltage Vgs Rds on Measurement:-10V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)5.3 A
Current Rating-5.3 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vdss)-20 V
Dual Supply Voltage-20 V
Element ConfigurationSingle
Fall Time68 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance860 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-2.5 V
Number of Channels1
Number of Elements1
On-State Resistance60 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2.5 W
Rds On Max60 mΩ
Recovery Time100 ns
Resistance60 mΩ
Rise Time26 ns
Threshold Voltage-2.5 V
Turn-Off Delay Time100 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità