Infineon IRF6718L2TR1PBF
$ 4.79
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF6718L2TR1PBF | 0 | 1K | Bulk | 17h | |||||||
| Farnell | IRF6718L2TR1PBF | 0 | 1 | Cut Tape | 1d | |||||||
| Worldway Electronics | IRF6718L2TR1PBF | 15.466 | 7 | Tape & Reel | 1d | |||||||
| Quest | IRF6718L2TR1PBF | 87 | 23h | |||||||||
| QUARKTWIN TECHNOLOGY LTD | IRF6718L2TR1PBF | Contatto | >1wk |
Modelli CAD
Scarica il simbolo Infineon IRF6718L2TR1PBF, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 EE Concierge | SimboloImpronta |
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-06-26
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2014-06-20
LTD Date2014-12-20
Descrizioni
Descrizioni di Infineon IRF6718L2TR1PBF fornite dai suoi distributori.
Trans MOSFET N-CH 25V 61A 13-Pin Direct-FET L6 T/R
MOSFET Operating temperature: -40...150 °C Housing type: DirectFET Polarity: N Power dissipation: 4.3 W
A 25V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET L2 PACKAGE RATED AT 61 | Infineon IRF6718L2TR1PBF
MOSFET N-CH 25V 61A DIRECTFET L6
Power Field-Effect Transistor, 61A I(D), 25V, 0.0007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET L6 package rated at 61 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
MOSFET, N CH, 25V, 61A, DIRECTFET L2; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:25V; On Resistance Rds(on):500µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:4.3W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DirectFET; SVHC:No SVHC (20-Jun-2011); Current Id Max:61A; Package / Case:L6; Power Dissipation Pd:4.3W; Power Dissipation Pd:4.3W; Pulse Current Idm:490A; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:25V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1.35V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageL
MountSurface Mount
Number of Pins13
Number of Terminals7
Technical
Continuous Drain Current (ID)61 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance700 µΩ
Drain to Source Voltage (Vdss)25 V
Dual Supply Voltage25 V
Element ConfigurationSingle
Fall Time53 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.5 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation83 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs1.9 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation4.3 W
Rds On Max700 µΩ
Recovery Time59 ns
Resistance500 kΩ
Rise Time140 ns
TerminationSMD/SMT
Threshold Voltage1.9 V
Turn-Off Delay Time47 ns
Turn-On Delay Time67 ns
Dimensions
Height676 µm
Length9.144 mm
Width7.1 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità