Infineon IRF6709S2TR1PBF
$ 1.63
Obsolete
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Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF6709S2TR1PBF.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-06-05
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Descrizioni
Descrizioni di Infineon IRF6709S2TR1PBF fornite dai suoi distributori.
Trans MOSFET N-CH 25V 12A 6-Pin Direct-FET S1 T/R
DIRECTFET POWER MOSFET Power Field-Effect Transistor, 12A I(D), 25V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
MOSFET, N-CH, 25V, DIRECTFETS1; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:25V; On Resistance Rds(on):5.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:1.8W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DirectFET; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:DirectFET; Current Id Max:12A; Package / Case:S1; Power Dissipation Pd:1.8W; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V; Voltage Vgs th Min:1.35V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageS
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance7.8 mΩ
Drain to Source Voltage (Vdss)25 V
Dual Supply Voltage25 V
Fall Time9.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.01 nF
Max Operating Temperature175 °C
Max Power Dissipation21 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Elements1
Power Dissipation1.8 W
Rds On Max7.8 mΩ
Recovery Time23 ns
Resistance7.8 MΩ
Rise Time25 ns
TerminationSMD/SMT
Threshold Voltage1.8 V
Turn-Off Delay Time9.1 ns
Turn-On Delay Time8.4 ns
Dimensions
Height558.8 µm
Length4.826 mm
Width3.95 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF6709S2TR1PBF.
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità