Infineon IRF5800TRPBF

Mosfet, Power; P-ch; Vdss -30V; Rds(on) 0.085 Ohm; Id -4A; TSOP-6; Pd 2W; Vgs +/-20V; -55
Obsolete
Pagina del produttoreScheda dati

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Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRF5800TRPBF.

IHS

Datasheet8 pagine16 anni fa

International Rectifier

iiiC

RS (Formerly Allied Electronics)

Newark

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descrizioni

Descrizioni di Infineon IRF5800TRPBF fornite dai suoi distributori.

MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.085Ohm;ID -4A;TSOP-6;PD 2W;VGS +/-20V;-55
-30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
Power Field-Effect Transistor, 4A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-4A; On Resistance, Rds(on):85mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TSOP-6 ;RoHS Compliant: Yes
MOSFET, N, 30V, TSOP-6; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-30V; Current, Id Cont:4A; Resistance, Rds On:0.085ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-1V; Case Style:TSOP; Termination Type:SMD; Application Code:LowR; Current, Id Cont @ 25°C:4A; Current, Id Cont @ 70°C:3.2; Current, Idm Pulse:32A; Power, Pd:2W; Thermal Resistance, Junction to Case A:62.5°C/W; Voltage, Rds Measurement:10V; Voltage, Vds:30V; Voltage, Vds Max:30V

Alias del produttore

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  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA