Infineon IRF1607PBF

MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 0.0058Ohm;ID 142A;TO-220AB;PD 380W;VGS +/-20

75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

IRF1607PBF,MOSFET, 75V, 142A, 7.5 MOHM, 210 NC QG, TO-220AB<

Trans MOSFET N-CH 80V 142A 3-Pin(3+Tab) TO-220AB

Power Field-Effect Transistor, 142A I(D), 75V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Transistor Polarity:n Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:142A; On Resistance Rds(On):0.0058Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes

N CH MOSFET, 75V, 142A, TO-220AB; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:142A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:380W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:142A; Junction to Case Thermal Resistance A:0.4°C/W; On State resistance @ Vgs = 10V:7.5ohm; Package / Case:TO-220AB; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Pulse Current Idm:570A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V