Infineon IRF1010NPBF

Name: Infineon IRF1010NPBF
Brand: Infineon
SKU: IRF1010NPBF

MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 11 Milliohms; ID 85A; TO-220AB; PD 180W; gFS 32S

$ 2.06

Obsolete

Pagina del produttore Scheda dati

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRF1010NPBF	0	1	Bulk	2,350	2,060	2,060	2,060	2,060	15h
Farnell		IRF1010NPBF	0	1		2,117*	1,161*	1,161*	1,161*	1,161*	18h
Component Stockers USA		IRF1010NPBF	5524			0,740	0,740	0,640	0,700	0,700	>1wk
Weyland Electronics Group Pte. Ltd.		IRF1010NPBF	5000	1	Tape & Reel	4,486	4,486	4,486	4,486	4,486	1d
Win Source	2	WS-IRF1010N	12.285	35				1,250	1,015	1,015	1d

Cronologia dell'inventario

Tendenza a 3 mesi: Restocked

Modelli CAD

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0 parti disponibili

Schede tecniche e documenti

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Newark

Datasheet9 pagine15 anni fa

Datasheet8 pagine15 anni fa

IHS

DigiKey

Mouser

iiiC

Cronologia dell'inventario

Trend di 3 mesi:

Restocked

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1995-11-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-09-30

LTD Date2025-03-31

Parti correlate

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MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 8 Milliohms;ID 110A;TO-220AB;PD 200W;gFS 44S

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Descrizioni

Descrizioni di Infineon IRF1010NPBF fornite dai suoi distributori.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11 Milliohms;ID 85A;TO-220AB;PD 180W;gFS 32S

RS (Formerly Allied Electronics)

Single N-Channel 55 V 11 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans MOSFET N-CH Si 55V 85A 3-Pin(3+Tab) TO-220AB

Verical

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 180 W

Distrelec

Power Field-Effect Transistor, 85A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:85A; On Resistance, Rds(on):11mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

Newark

MOSFET, N, 55V, 72A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:68A; Drain Source Voltage Vds:55V; On Resistance Rds(on):12.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:115W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:85A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.2°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:11mohm; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:115W; Power Dissipation Pd:115W; Pulse Current Idm:270A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

Infineon Technologies
INF
INFINEO
INFINE
INFIN
INFINION
INFI
INFENION
SIM
INFIEON
INFINEON TECH
INFINEN
IFX
INFIENON
IR/INFINEON
INFINEON/IR
IFT
INFINEON/SIEMENS
LNFINEON
INFN
Infineon Tech ICs
INFINEON TECHNOLOGIE
NFINEON
INFINEON/Infineon
INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

IRF 1010 N PBF
IRF1010N
IRF1010NPBF.
SP001563032

Cronologia dell'inventario

Tendenza a 3 mesi: Restocked

Modelli CAD

Scarica il simbolo, l'impronta e il 3D STEP

Parti alternative

0 parti disponibili

Specifiche tecniche

Physical

Case/PackageTO-220AB

Contact PlatingTin

MountThrough Hole

Number of Pins3

Number of Terminals3

Technical

Continuous Drain Current (ID)75 A

Current Rating85 A

Drain to Source Breakdown Voltage55 V

Drain to Source Resistance11 mΩ

Drain to Source Voltage (Vdss)55 V

Dual Supply Voltage55 V

Element ConfigurationSingle

Fall Time48 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance3.21 nF

Max Junction Temperature (Tj)175 °C

Max Operating Temperature175 °C

Max Power Dissipation115 W

Min Breakdown Voltage55 V

Min Operating Temperature-55 °C

Nominal Vgs4 V

Number of Channels1

Number of Elements1

On-State Resistance11 mΩ

Package Quantity1000

PackagingBulk

Power Dissipation130 W

Rds On Max11 mΩ

Recovery Time100 ns

Resistance11 MΩ

Rise Time76 ns

Schedule B8541290080

TerminationThrough Hole

Threshold Voltage4 V

Turn-Off Delay Time39 ns

Turn-On Delay Time13 ns

Voltage Rating (DC)55 V

Dimensions

Height19.8 mm

Lead Pitch2.54 mm

Length10.6426 mm

Width4.82 mm