Infineon IRF1010ESPBF
$ 3.75
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF1010ESPBF.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Parti correlate
InfineonIRF1010NSPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11 Milliohms;ID 85A;D2Pak;PD 180W;VGS +/-20V
InfineonIRF1010EZSPBF
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
InfineonIRF1407STRLPBF
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078Ω, Id = 100A⑥) | MOSFET N-CH 75V 100A D2PAK
STMicroelectronicsSTB60NF06T4
N-Channel 60V - 0.014Ohm - 60A - D2APK StripFET(TM) II POWER MOSFET
STMicroelectronicsSTB85NF55T4
STB85NF55T4 N-channel MOSFET Transistor, 80 A, 55 V, 3-Pin D2PAK
STMicroelectronicsSTB60N55F3
N-channel 55 V, 6.5 mOhm typ., 80 A STripFET(TM) III Power MOSFET in D2PAK package
Descrizioni
Descrizioni di Infineon IRF1010ESPBF fornite dai suoi distributori.
Trans MOSFET N-CH 60V 84A 3-Pin (2+Tab) D2PAK
HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N, 60V, 84A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:84A; Junction to Case Thermal Resistance A:0.9°C/W; On State resistance @ Vgs = 10V:12mohm; Package / Case:D2-PAK; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:330A; Termination Type:SMD; Voltage Vds:60V; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)75 A
Current Rating83 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance12 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Fall Time53 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.21 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation3.8 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation200 W
Resistance12 mΩ
Rise Time78 ns
Threshold Voltage4 V
Turn-Off Delay Time48 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)60 V
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF1010ESPBF.
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità