Infineon IR2213SPBF
$ 3.32
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Tendenza a 3 mesi: -8.18%
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Schede tecniche e documenti
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8542.39.00.01
Introduction Date1999-01-01
Lifecycle StatusProduction (Last Updated: 5 months ago)
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Descrizioni
Descrizioni di Infineon IR2213SPBF fornite dai suoi distributori.
1200 V high-side and low-side gate driver IC with enable and shutdown, SOIC 16W, RoHS
Infineon SCT
IR2213 Series 20 V 2 A Surface Mount High and Low Side Driver - SOIC-16
Tube IR2213SPBF Half-Bridge 1996 gate driver 25ns 125C 2A 2.5A 1W
25ns 2 12V 280ns 20V 6V,9.5V Non-Inverting IGBT,MOSFET,N 17ns 2A,2.5A SOIC-16 2.35mm
MOSFET DRVR 1.2KV 2.5A 2-OUT Hi/Lo Side Non-Inv 16-Pin SOIC W Tube
DRIVER, MOSFET, HIGH/LOW SIDE, 2213; Device Type:MOSFET; Module Configuration:High Side / Low Side; Peak Output Current:2.5A; Input Delay:280ns; Output Delay:225ns; Supply Voltage Range:12V to 20V; Driver Case Style:SOIC; No. of Pins:16; Operating Temperature Range:-40°C to +125°C; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Base Number:2213; IC Generic Number:2213; Logic Function Number:2213; No. of Outputs:2; Offset Voltage:1200V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:2A; Output Current + Max:2000mA; Output Sink Current Min:2000mA; Output Source Current Min:1700mA; Output Voltage:1220V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:SOIC; Packaging Type:Peel Pack; Power Dissipation Pd:1.25W; Supply Voltage Max:20V; Supply Voltage Min:12V; Termination Type:SMD; Voltage Vcc Max:25V; Voltage Vcc Min:10V
EiceDRIVER™ 1200 V high- and low-side gate driver IC with typical 2.0 A source and 2.5 A sink currents in DSO-16 lead, wide-body package for IGBT discretes and IGBT modules.IR2213S utilizes proprietary 1200 V HVIC and latch immune CMOS technologies which enable a rugged, monolithic construction with integrated protective features such under voltage lockout protection, shutdown, and separate logic and power ground.The IR2213S three-phase gate driver is well suited for low- and medium- power designs up to 10 kW or higher power levels with additional external buffer current driver. IR2213S provides high performance drive capability with protective features for a cost-competitive solution.IR2213S belongs to the 1200 V level-shift junction isolated (JI) gate driver family.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -8.18%
Modelli CAD
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Parti alternative
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Specifiche tecniche
Physical
Case/PackageSOP
MountSurface Mount
Number of Pins16
Number of Terminals16
Technical
Channel TypeIndependent
Fall Time17 ns
Max Junction Temperature (Tj)125 °C
Max Operating Temperature125 °C
Max Output Current2.5 A
Max Power Dissipation1 W
Max Supply Current340 µA
Max Supply Voltage20 V
Min Operating Temperature-55 °C
Min Supply Voltage12 V
Nominal Supply Current340 µA
Number of Channels2
Number of Circuits1
Number of Drivers2
Number of Outputs2
Operating Supply Voltage15 V
Output Current2 A
Output Voltage1.22 kV
Package Quantity1980
PackagingBulk
Power Dissipation1.25 W
Propagation Delay280 ns
Rise Time25 ns
Schedule B8542310000
Turn-Off Delay Time225 ns
Turn-On Delay Time280 ns
Dimensions
Height2.65 mm
Height - Seated (Max)2.65 mm
Length10.3 mm
Terminal Pitch1.27 mm
Width7.5 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IR2213SPBF.
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità