Infineon IR21362PBF

Tube IR21362PBF Half-Bridge 2007 gate driver 190ns 125C 200mA 350mA 1.5W

Half Bridge Based IGBT/MOSFET Driver, 0.35A, CMOS, PDIP28

MOSFET Driver IC; Device Type:Bridge; Supply Voltage Min:12V; Supply Voltage Max:25V; Package/Case:28-DIP; No. of Pins:28; Operating Temperature Range:-40°C to +125°C; Fall Time, tf:50ns; High Side MOSFET Drive Type:Bootstrapped ;RoHS Compliant: Yes

DRIVER, MOSFET, 3PH HIGH/LOW, 21362; Device Type:MOSFET; Module Configuration:3-Phase Bridge; Peak Output Current:350mA; Output Resistance:50ohm; Input Delay:425ns; Output Delay:400ns; Supply Voltage Range:11.5V to 20V; Driver Case Style:DIP; No. of Pins:28; Operating Temperature Range:-40°C to +125°C; SVHC:No SVHC (19-Dec-2011); Base Number:21362; IC Generic Number:21362; Logic Function Number:21362; No. of Outputs:6; Offset Voltage:600V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:200mA; Output Current + Max:250mA; Output Sink Current Min:250mA; Output Source Current Min:120mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:12V; Package / Case:DIP; Power Dissipation Pd:1.5W; Supply Voltage Max:20V; Supply Voltage Min:11.5V; Termination Type:Through Hole; Voltage Vcc Max:25V; Voltage Vcc Min:12V

The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 3.3V logic. A current trip function which terminates all six outputs can be derived from an external current sense resistor. An enable function is available to terminate all six outputs simultaneously. An open-drain FAULT signal is provided to indicate that an over current or under voltage shutdown has occurred. Over current fault conditions are cleared automatically after a delay programmed externally via an RC network connected to the RCIN input. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates up to 600 volts.