Infineon IR2113STRPBF

600 V high-side and low-side gate driver IC with shutdown, SOIC 16W, RoHS

Tape & Reel (TR) IR2113SPBF Half-Bridge 1996 gate driver 35ns -40C~150C TJ 2A 2A 1.25W

MOSFET Driver, High Side and Low Side, 10V-20V supply, 2.5A output, SOIC-16

Gate Driver IC, Half-Bridge, SOIC-16, IR2113STRPBF

Half Bridge 2A 3.3V~20V 2A SOIC-16-300mil Gate Drive ICs ROHS

High and Low Side Driver, All High Voltage Pins On One Side, Separate Logic and Power Ground, Shut-Down in a 16-lead SOIC package

IR2113S Series Dual 25V Surface Mount High and Low Side Driver - SOIC-16

Gate Drivers; INFINEON; IR2113STRPBF; 2; 10 V - 20 V; 16; Surface Mount

EiceDRIVER™ 600 V high and low-side gate driver IC with typical 2.5 A source and 2.5 A sink currents in 16 Lead SOICWB package for IGBTs and MOSFETs. Also available in 14 Lead PDIP.

No. Of Channels:2Channels; Gate Driver Type:-; Driver Configuration:High Side And Low Side; Power Switch Type:Igbt, Mosfet; No. Of Pins:16Pins; Ic Case/Package:Soic; Ic Mounting:Surface Mount; Input Type:Non-Inverting Rohs Compliant: Yes |Infineon Technologies IR2113STRPBF.

Type = High Side / Type = Low Side / Outputs = 2 / Configuration = Half Bridge / Rise Time ns = 25 / Fall Time ns = 17 / Output Current A = 2.5 / Supply Voltage Min. V = 10 / Supply Voltage Max. V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 125 / Package Type = SOIC / Pins = 16 / Mounting Type = SMD / MSL = Level-3 / Packaging = Tape & Reel / Length mm = 10.5 / Width mm = 7.6 / Height mm = 2.65 / Reflow Temperature Max. °C = 300

The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.