Infineon IR2108SPBF

600 V half-bridge gate driver IC with shoot through protection, SOIC 8N, RoHS

Tube IR2108SPBF Half-Bridge 1996 gate driver 220ns -40C~150C TJ 200mA 350mA 625mW

Infineon 8Pin gate driver module, 20VPower, SOICencapsulation

Driver 600V 2-OUT High and Low Side Half Brdg Inv/Non-Inv 8-Pin SOIC N Tube

IR2108SPBF Series 20 V 200 mA Surface Mount Half-Bridge Driver - SOIC-8

MOSFET/IGBT DRIV, HALF BRIDGE, NSOIC-8; Driver Configuration:Half Bridge; Peak Output Current:350mA; Supply Voltage Min:10V; Supply Voltage Max:20V; Driver Case Style:NSOIC; No. of Pins:8Pins; Input Delay:220ns; Output D

Mosfet Driver, -40 To 125Deg C; No. Of Channels:2Channels; Gate Driver Type:-; Driver Configuration:Half Bridge; Power Switch Type:Mosfet; No. Of Pins:8Pins; Ic Case/Package:Nsoic; Ic Mounting:Surface Mount; Source Current:200Ma Rohs Compliant: Yes |Infineon Technologies IR2108SPBF

600 V Half Bridge Driver IC with typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to +600 V; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout for both channels; 3.3 V, 5 V, and 15 V logic input compatible; Cross-conduction prevention logic; Matched propagation delay for both channels; High side output in phase with HIN input; Low side output out of phase with LIN input; Logic and power ground + /- 5 V offset; Internal 540ns dead-time; Lower di/dt gate driver for better noise immunity