Infineon IPW65R045C7FKSA1

N-Channel 650 V 45 mOhm CoolMOSTM C7 Power Transistor-PG-TO-247-3
$ 5.99
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DistributorSKUMinPkg
AvnetIPW65R045C7FKSA161130
1d
Newark
2
IPW65R045C7FKSA11041
Arrow Electronics
2
IPW65R045C7FKSA19621
Future Electronics
2
IPW65R045C7FKSA11630Tube
RutronikTMOSP1103548030
8h

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Newark

Datasheet15 pagine0 anni fa

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Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-04-18
Lifecycle StatusProduction (Last Updated: 4 months ago)

Parti correlate

InfineonIPW60R040C7XKSA1
Power MOSFET, N Channel, 600 V, 50 A, 40 mOhm, TO-247, 3 Pins, Through Hole
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N-channel 650 V, 0.067 Ohm typ., 35 A, MDmesh M5 Power MOSFET in TO-247 package
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InfineonIPW65R070C6FKSA1
Trans MOSFET N-CH 650V 53.5A 3-Pin(3+Tab) TO-247 Tube
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STMicroelectronicsSTW42N65M5
N-channel 650 V, 0.070 Ohm typ., 33 A MDmesh M5 Power MOSFET in TO-247 package
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InfineonIPW65R099C6FKSA1
278W 20V 2.5V 127nC@ 10V 1N 650V 99m¦¸@ 10V 38A 2.78nF@ 100V TO-247 16.13mm*5.21mm*21.1mm
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STMicroelectronicsSTW56N65M2
N-channel 650 V, 0.049 Ohm typ., 49 A MDmesh M2 Power MOSFET in a TO-247 package
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Descrizioni

Descrizioni di Infineon IPW65R045C7FKSA1 fornite dai suoi distributori.

N-Channel 650 V 45 mOhm CoolMOSTM C7 Power Transistor-PG-TO-247-3
Future Electronics
INFINEON IPW65R045C7Power MOSFET, N Channel, 46 A, 650 V, 0.04 ohm, 10 V, 3.5 V
Utmel Electronic
Transistor MOSFET N-Channel 650V 46A 3-Pin TO-247 Tube
Avnet
Power Field-Effect Transistor, 46A I(D), 650V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
IHS
MOSFET, N-CH, 650V, 46A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 46A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; P
Farnell
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.
Infineon
Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:46A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V; Power Dissipation:227W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IPW65R045C7FKSA1.
Newark
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 46 / Drain-Source Voltage (Vds) V = 650 / ON Resistance (Rds(on)) mOhm = 45 / Gate-Source Voltage V = 20 / Fall Time ns = 7 / Rise Time ns = 14 / Turn-OFF Delay Time ns = 82 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 227
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Immagini

element14 APAC
Farnell
TME
RS
Rochester Electronics
UTSource
Future Electronics

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IPW65R045C7
  • IPW65R045C7FKSA1.
  • SP000929412