Infineon IPW50R199CPFKSA1
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IPW50R199CPFKSA1.
Modelli CAD
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-10-24
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2018-08-31
LTD Date2019-02-28
Parti correlate
STMicroelectronicsSTW26NM60N
N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in TO-247 package
InfineonIPW50R190CEFKSA1
Mosfet Transistor, N Channel, 18.5 A, 500 V, 0.17 Ohm, 13 V, 3 V Rohs Compliant: Yes
STMicroelectronicsSTW28N65M2
N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-247 package
STMicroelectronicsSTW24N60M2
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-247 package
InfineonIPW50R280CEFKSA1
92W(Tc) 20V 3.5V@ 350¦ÌA 32.6nC@ 10 V 1N 500V 280m¦¸@ 4.2A,13V 13A 773pF@100V TO-247 21.1mm
Descrizioni
Descrizioni di Infineon IPW50R199CPFKSA1 fornite dai suoi distributori.
Mosfet Transistor, N Channel, 17 A, 550 V, 199 Mohm, 10 V, 3 V Rohs Compliant: Yes
Power Field-Effect Transistor, 17A I(D), 500V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
MOSFET, N CH, 550V, 17A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 550V; On Resistance Rds(on): 0.18ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageTO-247
Contact PlatingTin
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)17 A
Drain to Source Resistance199 mΩ
Drain to Source Voltage (Vdss)500 V
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.8 nF
Max Dual Supply Voltage500 V
Max Operating Temperature175 °C
Max Power Dissipation139 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance199 mΩ
Package Quantity240
Power Dissipation139 W
Rds On Max199 mΩ
Rise Time14 ns
Turn-Off Delay Time80 ns
Turn-On Delay Time35 ns
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IPW50R199CPFKSA1.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità