Infineon IPP60R180C7XKSA1

Power MOSFET, N Channel, 600 V, 13 A, 180 Milliohms, TO-220, 3 Pins, Through Hole

13A, 600V, 0.18OHM, N-CHANNEL MO / N-Channel 600 V 13A (Tc) 68W (Tc) Through Hole PG-TO220-3-1

Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220

CoolMOS C7 Power Transistor N-Channel 600V 45A 3-Pin TO-220

Power Field-Effect Transistor, 13A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Mosfet, N-Ch, 600V, 13A, To-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.155Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes |Infineon Technologies IPP60R180C7XKSA1

The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.