Infineon IPP075N15N3GXKSA1
$ 1.374
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Cronologia dell'inventario
Tendenza a 3 mesi: +79.01%
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Supply Chain
Country of OriginGermany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-05-09
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
Parti correlate
onsemiFDP083N15A-F102
MOSFET N-CH 150V 83A TO220-3 / N-Channel 150 V 83A (Tc) 294W (Tc) Through Hole TO-220-3
InfineonIPP048N12N3GXKSA1
300W 20V 3V 137nC@ 10V 1N 120V 4.8m¦¸@ 10V 100A 9.03nF@ 60V TO-220 10mm*4.4mm*15.65mm
InfineonIPP200N15N3GXKSA1
Power MOSFET, N Channel, 150 V, 50 A, 0.016 ohm, TO-220, Through Hole
Descrizioni
Descrizioni di Infineon IPP075N15N3GXKSA1 fornite dai suoi distributori.
Trans MOSFET N-CH 150V 100A Automotive 3-Pin(3+Tab) TO-220 Tube / MOSFET N-CH 150V 100A TO220-3
Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO220-3
TRANSISTOR, OPTIMOS 3 POWER, N-CHANNEL, NORMAL LEVEL, 150V, 100A, TO220
Power Field-Effect Transistor, 100A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The 150 V OptiMOS™ achieves a reduction in RDS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor.This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.
MOSFET, N CH, 100A, 150V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:150V; On Resistance Rds(on):6.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:100A; Power Dissipation Pd:300W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +79.01%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)100 A
Drain to Source Resistance7.5 mΩ
Drain to Source Voltage (Vdss)150 V
Fall Time14 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.47 nF
Max Dual Supply Voltage150 V
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance7.5 mΩ
Package Quantity500
Power Dissipation300 W
Rds On Max7.5 mΩ
Rise Time35 ns
Schedule B8541290080
Turn-Off Delay Time46 ns
Turn-On Delay Time25 ns
Conformità
Classificazione ambientale
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità