Infineon IPP034N03LGXKSA1

Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220 Tube
$ 0.725
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

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DistributorSKUMinPkg
Rochester ElectronicsIPP034N03LGXKSA1689
3h
FarnellIPP034N03LGXKSA101
3h
Microchip USAIPP034N03LGXKSA1117150Tube
20h
VericalIPP034N03LGXKSA1490344
Win Source
2
WS-IPP034N03LG797460
4h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IPP034N03LGXKSA1.

Farnell

Datasheet10 pagine15 anni fa
Datasheet10 pagine18 anni fa

Newark

iiiC

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2007-07-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-09-30
LTD Date2025-03-31

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N-channel 30 V, 4.2 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
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InfineonIPP055N03LGXKSA1
Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-220 Tube
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STMicroelectronicsSTP85N3LH5
N-channel 30 V, 0.0042 Ohm , 80 A, TO-220; Power MOSFETs
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onsemiNDP603AL
MOSFET N-CH 30V 25A TO-220AB
Dettagli

Descrizioni

Descrizioni di Infineon IPP034N03LGXKSA1 fornite dai suoi distributori.

Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220 Tube
Verical
Power Field-Effect Transistor, 80A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IHS
MOSFET, N CH, 80A, 30V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:94W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Power Dissipation Pd:94W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
element14 APAC
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)
Infineon
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 3.4 / Gate-Source Voltage V = 20 / Fall Time ns = 5.4 / Rise Time ns = 6.4 / Turn-OFF Delay Time ns = 35 / Turn-ON Delay Time ns = 9.2 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 94
Distrelec

Immagini

Augswan
element14 APAC
TME
iiiC
LZChips
Distrelec
Future Electronics
Rochester Electronics

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IPP034N03L G
  • IPP034N03L G.
  • IPP034N03LG
  • SP000680772