Infineon IPG20N10S4L35ATMA1

100V, Dual N-Ch, 35 mΩ max, Automotive MOSFET, dual SS08 (5x6), OptiMOS™-T2, PG-TDSON-8, RoHS

Trans MOSFET N-CH 100V 20A Automotive 8-Pin TDSON EP T/R

MOSFET, AEC-Q101, DUAL N-CH, TDSON-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.029ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vg

Mosfet, N-Ch, 100V, 20A, 175Deg C, 43W; Channel Type:N Channel; Drain Source Voltage Vds N Channel:100V; Drain Source Voltage Vds P Channel:100V; Continuous Drain Current Id N Channel:20A; Continuous Drain Current Id P Channel:20A Rohs Compliant: Yes |Infineon Technologies IPG20N10S4L35ATMA1

Summary of Features: Dual N-channel Logic Level - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: Dual Super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction.; Bond wire is 200um for up to 20A current; Larger source lead frame connection for wire bonding; Package: PG-TDSON-8-4; Same thermal and electrical performance as a DPAK with the same die size.; Exposed pad provides excellent thermal transfer (varies by die size); Two N-Channel MOSFETs in one package with 2 isolated leadframes | Target Applications: Direct Fuel Injection; Solenoid control; LED and Body lighting