Infineon IPD80R280P7ATMA1

Infineon NChannelMOSFETTube, Vds=800 V, 17 A, TO-252encapsulation, surface mount, 3Pin

Trans MOSFET N-CH 800V 17A 3-Pin(2+Tab) DPAK T/R

A new benchmark in efficiency and thermal performance, PG-TO252-3, RoHS

N-CH+ESD 800V 17A 280mOhm DPAK

Power Field-Effect Transistor, 17A I(D), 800V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Infineon IPD80R280P7ATMA1 MOSFET

IPD80R280 - 800V COOLMOS N-CHANN

800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.