Infineon IPD60R360PFD7SAUMA1

MOSFET N-CH 650V 10A TO252-3 / N-Channel 650 V 10A (Tc) 43W (Tc) Surface Mount PG-TO252-3-344

Mosfet, N-Ch, 600V, 10A, To-252 Rohs Compliant: Yes |Infineon Technologies IPD60R360PFD7SAUMA1

600V 10A 360m惟@10V,2.9A 43W 4.5V@140uA 1 N-Channel TO-252-3 MOSFETs ROHS

Trans MOSFET N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R

Power Field-Effect Transistor, 10A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-252

场效应管, MOSFET, N沟道, 600V, 10A, TO-252;

INFINEON MOSFET IPD60R360PFD7SAUMA1

MOS, Vds=650 V, 24 A, PG-TO252-3

The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R360PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPD60R360PFD7S in a TO-252 DPAK package features RDS(on) of 360mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon's industry-leading SMD package reduce PCB space and in turn the bill-of-material (BOM) the customer.This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.