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Mosfet, N-Ch, 60V, 50A, To-252 Rohs Compliant: Yes |Infineon Technologies IPD50N06S4L12ATMA2
IPD50N06S4L Series 60 V 50 A 12 mOhm OptiMOS®-T2 Power-Transistor -PG-TO252-3-11
Power MOSFET, N Channel, 60 V, 50 A, 0.012 ohm, TO-252 (DPAK), Surface Mount
60V, N-Ch, 12 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2, PG-TO252-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 50A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, AEC-Q101, N-CH, 60V, 50A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0096ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs
Summary of Features: N-channel - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors