Infineon IPB80N06S2L05ATMA1

Mosfet Transistor, N Channel, 80 A, 55 V, 0.0041 Ohm, 4.5 V, 1.6 V Rohs Compliant: Yes
Obsolete
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Datasheet8 pagine20 anni fa

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Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-03-13
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2016-10-01
LTD Date2017-04-01

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Descrizioni

Descrizioni di Infineon IPB80N06S2L05ATMA1 fornite dai suoi distributori.

Mosfet Transistor, N Channel, 80 A, 55 V, 0.0041 Ohm, 4.5 V, 1.6 V Rohs Compliant: Yes
Newark
Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
Verical
55V, N-Ch, 5 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™, PG-TO263-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 80A I(D), 55V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IHS
MOSFET, N-CH, 55V, 80A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0041ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.6V; Po
Farnell
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
Infineon

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