Infineon IPA65R190C6

Trans MOSFET N-CH 700V 20.2A 3-Pin(3+Tab) TO-220FP Tube
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IPA65R190C6.

IHS

Datasheet19 pagine15 anni fa

TME

_legacy Avnet

Modelli CAD

Scarica il simbolo Infineon IPA65R190C6, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.

FONTEeCADmCADFILE
EE Concierge
SimboloImpronta
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-05-19
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-08-31
LTD Date2019-02-28

Parti correlate

Power MOSFET, N Channel, 600 V, 21 A, 0.15 ohm, TO-220, Through Hole
35W(Tc) 30V 4V@ 250¦ÌA 86nC@ 10 V 1N 600V 180m¦¸@ 11A,10V 21A 1.92nF@100V TO-220 16.12mm
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650V, 24A, 150mΩ, TO-220
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650V, 20.6A, 190mΩ, TO-220
Trans MOSFET N-CH 700V 22.4A 3-Pin(3+Tab) TO-220 Full-Pack
STMicroelectronicsSTF33N65M2
N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in TO-220FP package

Descrizioni

Descrizioni di Infineon IPA65R190C6 fornite dai suoi distributori.

Trans MOSFET N-CH 700V 20.2A 3-Pin(3+Tab) TO-220FP Tube
MOSFET N-Ch 700V 20.2A TO220FP-3 CoolMOS C6
Power Field-Effect Transistor, 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
34W 20V 73nC@ 10V 700V 190m¦¸@ 10V 1.62nF@ 100V TO-220
Extremely low losses due to very low FOM Rdson*Qg and Eoss
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS
Infineon SCT
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IPA65R190C6XKSA1
  • SP000863892