Infineon IPA50R399CPXKSA1
$ 0.815
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Schede tecniche e documenti
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-02-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-08-31
LTD Date2019-02-28
Parti correlate
STMicroelectronicsSTF11NM50N
N-channel 500 V, 0.40 Ohm typ., 8.5 A MDmesh II Power MOSFET in a TO-220FP package
STMicroelectronicsSTF10NM50N
N-channel 500 V, 0.53 Ohm, 7 A TO-220FP MDmesh(TM) II Power MOSFET
Descrizioni
Descrizioni di Infineon IPA50R399CPXKSA1 fornite dai suoi distributori.
Trans MOSFET N-CH 500V 9A 3-Pin TO-220FP Tube
Power Field-Effect Transistor, 9A I(D), 500V, 0.399ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULL PACK-3
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
MOSFET, N, TO-220; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Typ Voltage Vds:550V; Current, Id Cont:9A; On State Resistance:0.399ohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:3V; Case Style:TO-220; ;RoHS Compliant: Yes
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageTO-220-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)9 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance399 mΩ
Drain to Source Voltage (Vdss)500 V
Dual Supply Voltage550 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance890 pF
Max Operating Temperature150 °C
Max Power Dissipation31 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
On-State Resistance399 mΩ
Package Quantity500
Power Dissipation31 W
Rds On Max399 mΩ
Rise Time14 ns
TerminationThrough Hole
Threshold Voltage3 V
Turn-Off Delay Time80 ns
Turn-On Delay Time35 ns
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IPA50R399CPXKSA1.
Conformità
Classificazione ambientale
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità