Infineon IMW120R090M1HXKSA1

CoolSiC Silicon Carbide Trench MOSFET N-Channel 1200V 26A 3-Pin TO-247 Tube

Silicon Carbide MOSFET, Single, N Channel, 26 A, 1.2 kV, 0.09 ohm, TO-247

Power Field-Effect Transistor, 26A I(D), 1200V, 0.16ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247

Mosfet, n-Ch,1.2Kv,26A,175Deg C,115W, transistor Polarity-N Channel, continuous Drain Current Id-26A, drain Source Voltage Vds-1.2Kv, on Resistance Rdson-0.09Ohm, rdson Test Voltage Vgs-18V, threshold Voltage Vgs-4.5V, power Rohs Compliant: Yes |Infineon Technologies IMW120R090M1HXKSA1

The CoolSiC™ 1200 V, 90 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic. CoolSiC™ MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.