Infineon IMW120R014M1HXKSA1

Silicon Carbide MOSFET, Single, N Channel, 127 A, 1.2 kV, 0.014 ohm, TO-247

Power Field-Effect Transistor, 127A I(D), 1200V, 0.0219ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247

Sic Mosfet, N-Ch, 1.2Kv, 127A, To-247-3; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:127A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:3Pins; Rds(On) Test Voltage:18V Rohs Compliant: Yes |Infineon Technologies IMW120R014M1HXKSA1

The CoolSiC™ 1200 V, 14 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic. CoolSiC™ MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.