Infineon IMBG120R181M2HXTMA1

Silicon Carbide MOSFET, Single, N Channel, 14.9 A, 1.2 kV, 181.4 Milliohms, TO-263 (D2PAK), 7 Pins
$ 2.244
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AvnetIMBG120R181M2HXTMA110001K
5h
NewarkIMBG120R181M2HXTMA11001Cut Tape
Future Electronics
2
IMBG120R181M2HXTMA1151Cut Tape
Rochester ElectronicsIMBG120R181M2HXTMA1401
3h
Arrow ElectronicsIMBG120R181M2HXTMA16901

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Country of OriginAustria, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2024-11-08
Lifecycle StatusProduction (Last Updated: 1 month ago)

Descrizioni

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Silicon Carbide MOSFET, Single, N Channel, 14.9 A, 1.2 kV, 181.4 Milliohms, TO-263 (D2PAK), 7 Pins
EBV Elektronik
Trans MOSFET N-CH SiC 1.2KV 14.9A 8-Pin(7+Tab) D2PAK T/R
Verical
Sic Mosfet, N-Ch, 1.2Kv, 14.9A, To-263Hv; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:14.9A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:7Pins; Rds(On) Test Voltage:18V Rohs Compliant: Yes |Infineon Technologies IMBG120R181M2HXTMA1
Newark
The CoolSiC™ MOSFET discrete 1200 V, 181 mΩ G2 in a D2PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Infineon

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  • Infineon Technologies
  • INF
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  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA