Infineon IKW30N65WR5XKSA1

650 V, 30 A IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
$ 1.13
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Arrow ElectronicsIKW30N65WR5XKSA11601
DigiKeyIKW30N65WR5XKSA1-ND831Tube
NewarkIKW30N65WR5XKSA101
AvnetIKW30N65WR5XKSA10480
10h
FarnellIKW30N65WR5XKSA101
8h

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Datasheet15 pagine0 anni fa

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Country of OriginGermany, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-06-01
Lifecycle StatusProduction (Last Updated: 2 weeks ago)

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Descrizioni

Descrizioni di Infineon IKW30N65WR5XKSA1 fornite dai suoi distributori.

650 V, 30 A IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
Infineon SCT
Trans IGBT Chip N-CH 650V 60A 185W 3-Pin(3+Tab) TO-247 Tube
Verical
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247
IHS
Infineon IKW30N65WR5XKSA1 IGBT, 30 A 650 V PG-TO247-3
TodayComponents
Reverse conducting IGBT with monolithic body diode
Win Source
TO-247-3 IGBT Transistors / Modules ROHS
ODG (Origin Data Global)
IGBT Transistors HOME APPLIANCES 14
Digi-ic_SMART PIONEER
晶体管, IGBT, 650V, 60A, 175度 C, 185W;
element14 APAC
Igbt, Single, 650V, 60A, To-247; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:1.4V; Power Dissipation:185W; Collector Emitter Voltage Max:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon Technologies IKW30N65WR5XKSA1
Newark
High speed 650 V, 30 A reverse conducting TRENCHSTOP™ 5 WR5 IGBT in TO-247 package. The Reverse Conducting TRENCHSTOP™ 5 WR5 IGBT features an optimized diode that is adequately rated for the target application. WR5 is recommended for use in the PFC stage in air conditioning, DC/DC in welding, AC/DC in UPS and MPPT in solar string inverters. The excellent price/performance ratio of WR5 IGBT allows access to the high-performance technology also for cost sensitive customers.
Infineon

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Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IKW30N65WR5
  • SP001273472