Infineon IKQ75N120CS7XKSA1

Trans IGBT Chip N-CH 1200V 154A 630W 3-Pin(3+Tab) TO-247 Tube
$ 5.143
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DistributorSKUMinPkg
NewarkIKQ75N120CS7XKSA12851
DigiKey448-IKQ75N120CS7XKSA1-ND2641Tube
AvnetIKQ75N120CS7XKSA10240
2d
Arrow ElectronicsIKQ75N120CS7XKSA10240
FarnellIKQ75N120CS7XKSA12851
22h

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Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2023-01-23
Lifecycle StatusProduction (Last Updated: 4 months ago)

Descrizioni

Descrizioni di Infineon IKQ75N120CS7XKSA1 fornite dai suoi distributori.

Trans IGBT Chip N-CH 1200V 154A 630W 3-Pin(3+Tab) TO-247 Tube
Verical
IGBT, 154 A, 1.65 V, 630 W, 1.2 kV, TO-247 Plus, 3 Pins
Avnet
IGBT, SINGLE, 1.2KV, 154A, TO-247PLUS;
Farnell
IGBT TRENCH 1200V 154A TO247-46
DigiKey
Infineon IKQ75N120CS7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 75 A 1200 V, 3-Pin PG-TO247-3-PLUS-N,
TodayComponents
Hard-switching 1200 V, 75 A TRENCHSTOP IGBT7
Future Electronics
Insulated Gate Bipolar Transistor
IHS
Igbt, Single, 1.2Kv, 154A, To-247Plus; Continuous Collector Current:154A; Collector Emitter Saturation Voltage:1.65V; Power Dissipation:630W; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon Technologies IKQ75N120CS7XKSA1
Newark
Hard-switching 1200 V, 75 A TRENCHSTOP™ IGBT7 S7 discrete in TO-247 package with EC7 diode inside. It offers low VCEsat to achieve very low conduction losses in target applications and the co-packed very soft and fast emitter controlled diode helps to minimize switching losses contibuiting to overall low total losses.
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